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BUAF Transistor Datasheet pdf, BUAF Equivalent. Parameters and Characteristics. isc website: isc & iscsemi is registered trademark. 1 isc Silicon NPN Power Transistor. BUAF. DESCRIPTION. ·Collector-Emitter. BUAF STMicroelectronics Bipolar Transistors – BJT NPN Power Transistor datasheet, inventory, & pricing.

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Product is in volume production Evaluation: Please contact our sales support for information on specific devices.

Product is in volume production only to support customers ongoing production. It is recommended that you completely review our Data Sheet s so as to confirm bu508wf the Device s meet functionality parameters for your application.

The BUAF is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage.

CDIL is a registered Trademark of. Media Subscription Media Contacts. Selectors Simulators and Models. Support Center Complete list and gateway to support services and resource pools. Distributor Name Region Stock Min. Marketing proposal for customer feedback. All diminsions in mm.

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BU508AF Datasheet, Equivalent, Cross Reference Search

General terms and conditions. Computers and Peripherals Data Center. Continental Device India Limited.

Who We Are Management. Max Operating Junction Temperature. Collector Emitter Sustaining Voltage.

Product is in volume production. Limited Engineering samples available Preview: Menu Products Explore our product portfolio. CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.

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Total Power Dissipation upto T. Collector Emitter Saturation Voltage. Product is under characterization. Product is in volume production 0. Product is in design stage Target: No availability reported, please contact our Sales office. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others.

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BUAF (CDIL) – Npn Power Transistors | eet

Base Emitter Saturation Voltage. Not Recommended for New Design. No commitment taken to design or produce NRND: Support Center Video Center. The datahseet information and the selection guides facilitate selection of the CDIL’s Discrete Semiconductor Device s best suited for application in your product s as per your requirement.

BUAF Datasheet(PDF) – Wing Shing Computer Components

CDIL however, does not assume responsibility for inaccuracies or incomplete information. Key Features Fully insulated power package U. No commitment taken to produce Proposal: ST Code of Conduct Blog. Product is in design feasibility stage. Collector Cut off Current.